Paper
19 November 2007 Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser
YuanBing Cheng, JiaoQing Pan, Fan Zhou, BaoJun Wang, Hongliang Zhu, Lingjuan Zhao, Wei Wang
Author Affiliations +
Proceedings Volume 6782, Optoelectronic Materials and Devices II; 67820Y (2007) https://doi.org/10.1117/12.740872
Event: Asia-Pacific Optical Communications, 2007, Wuhan, China
Abstract
High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt-joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250μm DFB and 170μm EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
YuanBing Cheng, JiaoQing Pan, Fan Zhou, BaoJun Wang, Hongliang Zhu, Lingjuan Zhao, and Wei Wang "Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser", Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820Y (19 November 2007); https://doi.org/10.1117/12.740872
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KEYWORDS
Modulators

Modulation

Capacitance

Waveguides

Quantum wells

Photonic integrated circuits

Semiconductor lasers

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