Randomly oriented indium phosphide nanowires for optoelectronics

Nobuhiko P. Kobayashi; V. J. Logeeswaran; Xuema Li; M. Saif Islam; Joseph Straznicky; Shih-Yuan Wang; R. Stanley Williams

doi:10.1117/12.739398

10 September 2007 Randomly oriented indium phosphide nanowires for optoelectronics

Nobuhiko P. Kobayashi, V. J. Logeeswaran, Xuema Li, M. Saif Islam, Joseph Straznicky, Shih-Yuan Wang, R. Stanley Williams

Author Affiliations +

Proceedings Volume 6779, Nanophotonics for Communication: Materials, Devices, and Systems IV; 67790E (2007) https://doi.org/10.1117/12.739398
Event: Optics East, 2007, Boston, MA, United States

Abstract

The concept of randomly-oriented semiconductor nanowires formed on non-single-crystal substrates is introduced and compared with semiconductor nanowires synthesized on single-crystal-substrates in the framework of epitaxial growth. In principle, epitaxial growth of semiconductor nanowires with the presence of metal-catalysts requires no single-crystal substrates owing to the small size of nanowires. A segment on a substrate from which crystallographic information is transferred to a single nanowire would only need to be as larger as the cross-section of a nanowire if a specific geometrical alignment for a group of nanowires is not required, suggesting that randomly-oriented semiconductor nanowires be formed on a surface that is characterized with short-range atomic order in contrast to long-range atomic order that exists on the surface of single-crystal substrates. The surfaces exhibiting short-range atomic order can be prepared on non-single-crystal substrates, further suggesting functional devices that utilize randomly-oriented semiconductor nanowires be fabricated on non-single-crystal substrates. Design, fabrication and characteristics of a photoconductor that utilizes an ensemble of randomly-oriented indium phosphide nanowires are described.

Citation Download Citation

Nobuhiko P. Kobayashi, V. J. Logeeswaran, Xuema Li, M. Saif Islam, Joseph Straznicky, Shih-Yuan Wang, and R. Stanley Williams "Randomly oriented indium phosphide nanowires for optoelectronics", Proc. SPIE 6779, Nanophotonics for Communication: Materials, Devices, and Systems IV, 67790E (10 September 2007); https://doi.org/10.1117/12.739398

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