Monte-Carlo modeling of monolithic CMOS sensors for X-ray and charged-particle imaging

Shengdong Li; Howard S. Matis; Stuart Kleinfelder

doi:10.1117/12.729406

24 September 2007 Monte-Carlo modeling of monolithic CMOS sensors for X-ray and charged-particle imaging

Shengdong Li, Howard S. Matis, Stuart Kleinfelder

Proceedings Volume 6707, Penetrating Radiation Systems and Applications VIII; 67070O (2007) https://doi.org/10.1117/12.729406
Event: Optical Engineering + Applications, 2007, San Diego, California, United States

Abstract

A Monte Carlo model has been developed for epitaxial silicon active pixel sensor arrays. Ionization generation of ⁵⁵Fe X-rays and high energy electrons are modeled directly using random numbers that follow an exponential distribution and a Bichsel distribution, respectively. Both the simulation and measurement have identified a considerable bulk-silicon substrate contribution to collected ionization electrons, which is important in accurate modeling of sensor response to high energy electrons.

Citation Download Citation

Shengdong Li, Howard S. Matis, and Stuart Kleinfelder "Monte-Carlo modeling of monolithic CMOS sensors for X-ray and charged-particle imaging", Proc. SPIE 6707, Penetrating Radiation Systems and Applications VIII, 67070O (24 September 2007); https://doi.org/10.1117/12.729406

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