Analysis of conversion efficiency of internal second-harmonic generation in InGaAs quantum-well laser diodes emitting around 960 nm

F. Puntaru; N. N. Puscas

doi:10.1117/12.741917

8 May 2007 Analysis of conversion efficiency of internal second-harmonic generation in InGaAs quantum-well laser diodes emitting around 960 nm

F. Puntaru, N. N. Puscas

Author Affiliations +

Proceedings Volume 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III; 66350S (2007) https://doi.org/10.1117/12.741917
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 2006, Bucharest, Romania

Abstract

Based on the obtained experimental results in this paper we report some theoretical results concerning the realization of the phase-matching conditions for the internal second-harmonic generation in InGaAs quantum-well laser diodes emitting around 960 nm in order to enhance the conversion efficiency. The theoretical results obtained by numerical integration of the coupled amplitude equations corresponding to the fundamental and second liannonic concerning the interaction length and generation efficiency are in good agreement with the experimental data. The role of the phase-mismatching in the spectral distribution of the internal second-harmonic generation in the CW operation of the above mentiond lasers is also analysed. The emission of pairs of narrow blue-green peaks having perfectly symmetrical spectral positions with respect to the central peak of pure second-harmonic generation at 480 urn is most probably enhanced by a mechanism of reciprocal cancellation of the respective phase-mismatch vectors. The obtained results are important for the assessment of the relationship between the structural parameters of the laser and the conditions which contribute to the stimulation of second-order optical nonlinearities in the laser active region.

Citation Download Citation

F. Puntaru and N. N. Puscas "Analysis of conversion efficiency of internal second-harmonic generation in InGaAs quantum-well laser diodes emitting around 960 nm", Proc. SPIE 6635, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies III, 66350S (8 May 2007); https://doi.org/10.1117/12.741917

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