Recent results from the Berkeley 0.3-NA EUV microfield exposure tool

Patrick P. Naulleau; Chris N. Anderson; Kim Dean; Paul Denham; Kenneth A. Goldberg; Brian Hoef; Bruno La Fontaine; Tom Wallow

doi:10.1117/12.713440

15 March 2007 Recent results from the Berkeley 0.3-NA EUV microfield exposure tool

Patrick P. Naulleau, Chris N. Anderson, Kim Dean, Paul Denham, Kenneth A. Goldberg, Brian Hoef, Bruno La Fontaine, Tom Wallow

Author Affiliations +

Proceedings Volume 6517, Emerging Lithographic Technologies XI; 65170V (2007) https://doi.org/10.1117/12.713440
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

Operating as a SEMATECH resist test center, the Berkeley 0.3-NA EUV microfield exposure tool continues to play a crucial role in the advancement of EUV resists and masks. Here we present recent resist-characterization results from the tool as well as tool-characterization data. In particular we present lithographic-based aberration measurements demonstrating the long-term stability of the tool. We also describe a recent upgrade to the tool which involved redesign of the programmable coherence illuminator to provide improved field uniformity as well as a programmable field size.

Citation Download Citation

Patrick P. Naulleau, Chris N. Anderson, Kim Dean, Paul Denham, Kenneth A. Goldberg, Brian Hoef, Bruno La Fontaine, and Tom Wallow "Recent results from the Berkeley 0.3-NA EUV microfield exposure tool", Proc. SPIE 6517, Emerging Lithographic Technologies XI, 65170V (15 March 2007); https://doi.org/10.1117/12.713440

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