Self-consistent modeling of resonant PL in InGaN SQW LED-structure

M. Sabathil; A. Laubsch; N. Linder

doi:10.1117/12.700461

13 February 2007 Self-consistent modeling of resonant PL in InGaN SQW LED-structure

M. Sabathil, A. Laubsch, N. Linder

Author Affiliations +

Proceedings Volume 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI; 64860V (2007) https://doi.org/10.1117/12.700461
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

The measurement of the bias and temperature dependent photoluminescence, photocurrent and their decay times allows to deduce important physical properties such as barrier height, electron-hole overlap and the magnitude of the piezoelectric field in InGaN quantum wells. However the analysis of these experiments demands for a detailed physical model based on a realistic device structure which is able to predict the measured quantities. In this work a selfconsistent model is presented based on a realistic description of the alloy and doping profile of a green InGaN single quantum well light emitting diode. The model succeeds in the quantitative prediction of the quantum confined Stark shift and the associated change in the electron-hole overlap measured via the change in the bimolecular decay rate using literature parameters for the piezoelectric constants. The blue shift of the emission under forward current conditions can be attributed to the carrier induced screening of the piezoelectric charges as predicted by the model. The photocurrent is calculated via thermionic tunneling through the barriers using a WKB-approximation and the calculated potential profile for the tunneling barrier. From the fact that the bias and temperature dependence of the experimentally observed photocurrent cannot be described by the thermionic tunneling model even though the theoretical potential profile fits excellent to the luminescence data, we conclude that the carrier escape is dominated by a different mechanism such as defect- or phonon-assisted tunneling.

Citation Download Citation

M. Sabathil, A. Laubsch, and N. Linder "Self-consistent modeling of resonant PL in InGaN SQW LED-structure", Proc. SPIE 6486, Light-Emitting Diodes: Research, Manufacturing, and Applications XI, 64860V (13 February 2007); https://doi.org/10.1117/12.700461

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