Self-assembled microfabrication technology for 3D isotropic negative index material

V. J. Logeeswaran; M. Saif Islam; Mei-Lin Chan; David A. Horsley; Wei Wu; Shih-Yuan Wang

doi:10.1117/12.687140

2 October 2006 Self-assembled microfabrication technology for 3D isotropic negative index material

V. J. Logeeswaran, M. Saif Islam, Mei-Lin Chan, David A. Horsley, Wei Wu, Shih-Yuan Wang

Proceedings Volume 6393, Nanophotonics for Communication: Materials, Devices, and Systems III; 639305 (2006) https://doi.org/10.1117/12.687140
Event: Optics East 2006, 2006, Boston, Massachusetts, United States

Abstract

We present a fabrication method to realize three dimensional (3D) isotropic homogeneous negative index material (3DNIMs) using a low cost and massively parallel manufacturable and self-assembly technique. The construction of self-assembled 3D-NIM array was realized through two dimensional (2-D) planar microfabrication techniques exploiting the as-deposited residual stress imbalance between a bi-layer consisting of e-beam evaporated metal (chromium) and a structural layer of low stress silicon nitride deposited by LPCVD on a p-doped silicon substrate. A periodic continuation of a single rectangular unit cell consisting of split-ring resonators (SRR) and wires were fabricated to generate a 3D assembly by orienting them along all three Cartesian axes. The thin chromium and silicon nitride bi-layer is formed as hinges. The strain mismatch between the two layers at the hinge curls the structural layer containing the SRR upwards. The self-assembled out-of-plane angular position depends on the thickness and material composing the bi-layer. This built-in stress-actuated assembly method is suitable for applications requiring a thin dielectric layer for the SRR and/or active devices.

Citation Download Citation

V. J. Logeeswaran, M. Saif Islam, Mei-Lin Chan, David A. Horsley, Wei Wu, and Shih-Yuan Wang "Self-assembled microfabrication technology for 3D isotropic negative index material", Proc. SPIE 6393, Nanophotonics for Communication: Materials, Devices, and Systems III, 639305 (2 October 2006); https://doi.org/10.1117/12.687140

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