Binary Cr etch process control directed at the 45nm node

J. Plumhoff; R. Westerman; C. Constantine

doi:10.1117/12.681757

20 May 2006 Binary Cr etch process control directed at the 45nm node

J. Plumhoff, R. Westerman, C. Constantine

Proceedings Volume 6283, Photomask and Next-Generation Lithography Mask Technology XIII; 62831U (2006) https://doi.org/10.1117/12.681757
Event: Photomask and Next Generation Lithography Mask Technology XIII, 2006, Yokohama, Japan

Abstract

In any plasma etch process, there are slight variations in the output of generators, mass flows, and pressure control systems that may sometimes contribute to run-to-run differences in the final product. Even excluding material differences, endpoint times can vary somewhat, requiring an accurate endpoint system to stop processing at the appropriate time. The most widely accepted systems for plasma endpoint detection are based on optical emission spectroscopy (OES). OES-based endpoint systems analyze the visible and near-visible electromagnetic radiation emitted by the plasma in order to detect subtle changes that occur when a film has been completely etched. A signal can be constructed from this data and used to stop or otherwise modify the process. Other methods exist for detecting endpoint. Laser reflectance is well known to photomask etch engineers, but there are also lesser known methods that depend on detecting changes in pressure, DC bias, or match network positions. Each system has its own unique set of strengths and weaknesses. While all of these systems are quite capable of detecting endpoint under normal circumstances, the requirements of low load photomask etching are extremely demanding. Therefore, a need exists to enhance endpoint detection on low load photomasks. Our proposed method is a multi-sensor system that includes measurements of several process parameters in addition to emission spectra to generate an endpoint signal that is more robust than an endpoint signal produced by a single sensor.

Citation Download Citation

J. Plumhoff, R. Westerman, and C. Constantine "Binary Cr etch process control directed at the 45nm node", Proc. SPIE 6283, Photomask and Next-Generation Lithography Mask Technology XIII, 62831U (20 May 2006); https://doi.org/10.1117/12.681757

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Etching

Chromium

Genetic algorithms

Signal processing

Plasma

Photomasks

Signal to noise ratio

Show All Keywords

Keywords/Phrases

Search In:

Publication Years