Simulation of the vertical MOSFET with electrically variable source-drain junctions

I. A. Horin; A. A. Orlikovsky; A. E. Rogozhin; A. G. Vasiliev

doi:10.1117/12.683554

10 June 2006 Simulation of the vertical MOSFET with electrically variable source-drain junctions

I. A. Horin, A. A. Orlikovsky, A. E. Rogozhin, A. G. Vasiliev

Proceedings Volume 6260, Micro- and Nanoelectronics 2005; 62601R (2006) https://doi.org/10.1117/12.683554
Event: Micro- and Nanoelectronics 2005, 2005, Zvenigorod, Russian Federation

Abstract

Vertical MOSFET with electrically variable source-drain junctions has been simulated in ISE TCAD. Novel structure has been developed thoroughly. New concepts and materials like high-k and silicide have been used. For the present some electrical characteristics have been investigated by modeling. Marginal on-off drain current values has been obtained and analyzed. Parasitic capacitance, resistances and time delays have been calculated. As a result, the vertical MOSFET with electrically variable junctions has excellent electrical characteristics and very high cut-off frequency.

Citation Download Citation

I. A. Horin, A. A. Orlikovsky, A. E. Rogozhin, and A. G. Vasiliev "Simulation of the vertical MOSFET with electrically variable source-drain junctions", Proc. SPIE 6260, Micro- and Nanoelectronics 2005, 62601R (10 June 2006); https://doi.org/10.1117/12.683554

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