Epitaxial Growth On SIMOX Wafers

Hon Wai Lam

doi:10.1117/12.961207

26 June 1986 Epitaxial Growth On SIMOX Wafers

Hon Wai Lam

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961207
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

The top silicon layer in as-implanted SIMOX wafer is usually too thin to support device fabrication. Hence, an epitaxial layer is usually grown on a SIMOX wafer after oxygen ion implantation and anneal. Because this epitaxial layer is typically very thin (less than 500 nm) and because of the material structure of the SIMOX wafer, special care has to be exercised in order to obtain desirable epitaxial growth. This paper describes the unique problems of epitaxial growth on SIMOX.

Citation Download Citation

Hon Wai Lam "Epitaxial Growth On SIMOX Wafers", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961207

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