Methods for benchmarking photolithography simulators: part IV

Trey Graves; Mark D. Smith; Chris A. Mack

doi:10.1117/12.660031

20 March 2006 Methods for benchmarking photolithography simulators: part IV

Trey Graves, Mark D. Smith, Chris A. Mack

Author Affiliations +

Proceedings Volume 6154, Optical Microlithography XIX; 61542X (2006) https://doi.org/10.1117/12.660031
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

In a previous series of papers, we proposed benchmarks for lithography simulators drawn from the optics literature for aerial image, optical film-stack calculations, and mask topography effects. We extend this work and present benchmarks for PEB and resist development. These benchmarks can easily be applied to any lithography simulator that models these lithographic effects.

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Trey Graves, Mark D. Smith, and Chris A. Mack "Methods for benchmarking photolithography simulators: part IV", Proc. SPIE 6154, Optical Microlithography XIX, 61542X (20 March 2006); https://doi.org/10.1117/12.660031

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