Numerical modeling of absorber characteristics for EUVL

In-Yong Kang; Jinho Ahn; Hye-Keun Oh; Yong-Chae Chung

doi:10.1117/12.655852

23 March 2006 Numerical modeling of absorber characteristics for EUVL

In-Yong Kang, Jinho Ahn, Hye-Keun Oh, Yong-Chae Chung

Proceedings Volume 6151, Emerging Lithographic Technologies X; 615121 (2006) https://doi.org/10.1117/12.655852
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

The characteristics of various potential absorbers, such as Cr, Ta, and TaN materials were quantitatively investigated by calculating the optical contrast and geometrical width variation of pattern image of 25-nm-width transferred through the exposure system. The intrinsic absorber performance was evaluated by the numerical modeling of the reflectivity on the mask and the aerial image intensity on the wafer. The reflectivity on the mask was calculated for various absorber thicknesses (40-70 nm) using Fresnel equation. For the calculation of the aerial image intensity of pattern features with various absorbers, SOLID-EUV, which is capable of rigorous electromagnetic field computation, was employed. It could be reasonably concluded that the TaN absorber model showed superior optical characteristics compared to other absorber systems, whereas the best performance on the geometrical characteristics was found in the Ta absorber system.

Citation Download Citation

In-Yong Kang, Jinho Ahn, Hye-Keun Oh, and Yong-Chae Chung "Numerical modeling of absorber characteristics for EUVL", Proc. SPIE 6151, Emerging Lithographic Technologies X, 615121 (23 March 2006); https://doi.org/10.1117/12.655852

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