Photon assisted conducting polymer polymerization process for storage information and microelectronic device development

W. M. de Azevedo; R. A. de Barros; E. F. da Silva Jr.

doi:10.1117/12.641930

3 March 2006 Photon assisted conducting polymer polymerization process for storage information and microelectronic device development

W. M. de Azevedo, R. A. de Barros, E. F. da Silva Jr.

Author Affiliations +

Proceedings Volume 6124, Optoelectronic Integrated Circuits VIII; 61241C (2006) https://doi.org/10.1117/12.641930
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

In this work, we use the photon polymerization process to prepare conducting polymer patterns and optical memory devices (CPROM). For the CPROM and image development, polyvinyl alcohol (PVA) is used as a solid support doped with the aniline monomer and transition metals, whereas for the patterns development, the ink, of a conventional DeskJet printer is substituted by a solution of transition metal ions that is used to print the desired pattern on substrates previously treated, in an aqueous solution of conducting polymer monomer. Both processes use photons and transition metals instead of conventional oxidants to promote polymerization of the aniline monomer inside the host medium, or on a flat surface, such as glossy paper. The SEM analysis of the CPROM shows that the metal particles grow in form of wire with diameter of 100 nm and lengths up to 4μm long. The conductivity of the printed conducting polymer patterns on glossy paper is about 2 × 10^-2 S/cm. These results strongly suggest that this new, fast and low cost technology can be used to produce conducting polymer structures for all polymer electronic devices applications.

Citation Download Citation

W. M. de Azevedo, R. A. de Barros, and E. F. da Silva Jr. "Photon assisted conducting polymer polymerization process for storage information and microelectronic device development", Proc. SPIE 6124, Optoelectronic Integrated Circuits VIII, 61241C (3 March 2006); https://doi.org/10.1117/12.641930

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