Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications

Ashok K. Sood; Rajwinder Singh; Yash R. Puri; Frederick W. Clarke; Oleg Laboutin; Paul M Deluca; Roger E. Wesler; Jie Deng; James C. M. Hwang

doi:10.1117/12.651122

3 March 2006 Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications

Ashok K. Sood, Rajwinder Singh, Yash R. Puri, Frederick W. Clarke, Oleg Laboutin, Paul M Deluca, Roger E. Wesler, Jie Deng, James C. M. Hwang

Author Affiliations +

Proceedings Volume 6121, Gallium Nitride Materials and Devices; 61210D (2006) https://doi.org/10.1117/12.651122
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

GaN /AlGaN transistors are being developed for a variety of RF electronic devices that will eventually replace GaAs- and silicon-based devices for commercial and military applications. In this paper, we present results from the optimization of the growth conditions for GaN/AlGaN HEMT structures. The HEMT epitaxial layers are grown via MOCVD. We demonstrate that the key to high quality HEMT structures is the ability to grow uniform AlGaN layers. Details of the structural, electrical and optical characteristics of the HEMT epitaxial layers are presented. In addition, we present results on an innovative ICP etching used for HEMT fabrication. This technique allows for low damage device processing and improved reliability.

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Ashok K. Sood, Rajwinder Singh, Yash R. Puri, Frederick W. Clarke, Oleg Laboutin, Paul M Deluca, Roger E. Wesler, Jie Deng, and James C. M. Hwang "Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210D (3 March 2006); https://doi.org/10.1117/12.651122

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