Cathodoluminescence study of GaN and GaN:Si on sapphire

Nicolas Pauc; Matthew Phillips; Vincent Aimez; Dominique Drouin

doi:10.1117/12.646837

3 March 2006 Cathodoluminescence study of GaN and GaN:Si on sapphire

Nicolas Pauc, Matthew Phillips, Vincent Aimez, Dominique Drouin

Author Affiliations +

Proceedings Volume 6121, Gallium Nitride Materials and Devices; 61210A (2006) https://doi.org/10.1117/12.646837
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We present a luminescence study of as-grown GaN and GaN:Si samples by means of low voltage cathodoluminescence (CL) at low temperature. It is shown that high spatial resolution CL microscopy allows direct luminescence mapping of threading dislocations in the doped and undoped samples. Comparison of monochromatic CL images acquired near the band gap energy (free and bound excitons) and at lower energies (recombination on defects) reveal the dopant segregation around dislocations.

Citation Download Citation

Nicolas Pauc, Matthew Phillips, Vincent Aimez, and Dominique Drouin "Cathodoluminescence study of GaN and GaN:Si on sapphire", Proc. SPIE 6121, Gallium Nitride Materials and Devices, 61210A (3 March 2006); https://doi.org/10.1117/12.646837

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