Development of thermal sensor based on PbTe thin films in MEMS design

Zinovi Dashevsky; Eli Rabih; Moshe Dariel

doi:10.1117/12.639180

13 June 2006 Development of thermal sensor based on PbTe thin films in MEMS design

Zinovi Dashevsky, Eli Rabih, Moshe Dariel

Proceedings Volume 5946, Optical Materials and Applications; 59461B (2006) https://doi.org/10.1117/12.639180
Event: Optical Materials and Applications, 2005, Tartu, Estonia

Abstract

The work of a MEMS-technology compatible thin-film thermoelectric IR radiation sensor with multiple PbTe thermocouples is simulated. The sensitivity up to 350 V/W is predicted. PbTe thin films are grown on the BaF₂(111) buffered Si(111) substrates, using the hot-wall-beam epitaxy technique. Indium and zinc ion implantation is applied to transform the as-grown p-PbTe films into the n-type thermocouple counterpart films. With a dose of 10^l6 cm^-2 and exposition time of 3-4 h, a 4-μm-thick film is homogeneously reversed, retaining the high epitaxial quality.

Citation Download Citation

Zinovi Dashevsky, Eli Rabih, and Moshe Dariel "Development of thermal sensor based on PbTe thin films in MEMS design", Proc. SPIE 5946, Optical Materials and Applications, 59461B (13 June 2006); https://doi.org/10.1117/12.639180

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