MEMS based tunable infrared sensors

J. Antoszewski; K. J. Winchester; A. J. Keating; T. Nguyen; K. K. M. B. D. Silva; H. Huang; C. A. Musca; J. M. Dell; L. Faraone; P. Mitra; J. D. Beck; M. R. Skokan; J. E. Robinson

doi:10.1117/12.624884

7 July 2005 MEMS based tunable infrared sensors (Invited Paper)

J. Antoszewski, K. J. Winchester, A. J. Keating, T. Nguyen, K. K. M. B. D. Silva, H. Huang, C. A. Musca, J. M. Dell, L. Faraone, P. Mitra, J. D. Beck, M. R. Skokan, J. E. Robinson

Author Affiliations +

Proceedings Volume 5840, Photonic Materials, Devices, and Applications; (2005) https://doi.org/10.1117/12.624884
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain

Abstract

A low temperature MEMS process integrated with an infrared detector technology has been developed. The integrated microsystem is capable of electrically selecting narrow wavelength bands in the range from 1.6 to 2.5 μm within the short-wavelength infrared (SWIR) region of the electromagnetic spectrum. The integrated fabrication process is compatible with two-dimensional infrared focal plane array technology. The demonstration prototypes consist of both HgCdTe SWIR photoconductive as well as high density vertically integrated photodiode (HDVIP®) detectors, two distributed Bragg mirrors formed of Ge-SiO-Ge, an air-gap optical cavity, and a silicon nitride membrane for structural support. The tuning spectrum from fabricated MEMS filters on photoconductive detectors indicates a wide tuning range and high percentage transmission. Tuning is achieved with a voltage of only 7.5 V, and the FWHM ranged from 95-105 nm over a tuning range of 2.2 μm to 1.85 μm. The same MEMS filters, though unreleased, and with the sacrificial layer within the optical cavity, have been fabricated on planarised SWIR HDVIP® photodiodes with FWHM of less than 60 nm centred at a wavelength of approximately 1.8 μm. Finite element modelling of various geometries for the silicon nitride membrane will also be presented. The modelling is used to optimize the filter geometry in terms of fill factor, mirror displacement versus applied voltage, and membrane bowing.

Citation Download Citation

J. Antoszewski, K. J. Winchester, A. J. Keating, T. Nguyen, K. K. M. B. D. Silva, H. Huang, C. A. Musca, J. M. Dell, L. Faraone, P. Mitra, J. D. Beck, M. R. Skokan, and J. E. Robinson "MEMS based tunable infrared sensors (Invited Paper)", Proc. SPIE 5840, Photonic Materials, Devices, and Applications, (7 July 2005); https://doi.org/10.1117/12.624884

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available