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Boron-doped diamond-like carbon (B-DLC) thin films were deposited on n-type silicon (100) substrates by arc-discharge plasma chemical vapor deposition (arc-PCVD) technique, followed by a deposition of TiNx (0.8 < x < 1.1) mark on top of the carbon films to form heterojunction devices. The crystallinity of the carbon film was confirmed to be a mixing of sp3/sp2 coordination with nanocrystalline diamond grains embedded in the amorphous network. The performance of TiNx / p-C (B) / n-Si / AuSb heterojunction cells has been evaluated under dark I-V rectifying curve and I-V working curve with a proper illumination. At higher boron content the films exhibited a high internal conductivity and an overall phase-related character. The TiNx exhibited an excellent ohmic contact behavior as a metallic electrode of the devices.
Z. Q. Ma andQ. Zhang
"Photovoltaic feature of boron-doped nanocrystalline carbon films on silicon", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607381
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Z. Q. Ma, Q. Zhang, "Photovoltaic feature of boron-doped nanocrystalline carbon films on silicon," Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607381