Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN

Christian Wetzel; Yong Xia; Theeradetch Detchprohm; Peng Li; Jeffrey S. Nelson

doi:10.1117/12.602144

7 March 2005 Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN

Christian Wetzel, Yong Xia, Theeradetch Detchprohm, Peng Li, Jeffrey S. Nelson

Author Affiliations +

Proceedings Volume 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX; (2005) https://doi.org/10.1117/12.602144
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Increasing emission power and efficiency in green light emitting diodes is one of the big challenges towards all-solid-state lighting. The prime challenge lies in the combination of extension of wavelength from 470 nm blue to 525 nm green while maintaining the emission power level. Commonly a steep decrease in power is observed. In a broad development effort we have been able to ameliorate that decrease significantly and obtain bare die performance at 525 nm of 1.6 mW at 20 mA for 350x350 μm² dies. Here we discuss critical die performance and wafer yield aspects of our optimization approach to the active layer of the GaInN/GaN quantum wells.

Citation Download Citation

Christian Wetzel, Yong Xia, Theeradetch Detchprohm, Peng Li, and Jeffrey S. Nelson "Development of high-power green light emitting diode dies in piezoelectric GaInN/GaN", Proc. SPIE 5739, Light-Emitting Diodes: Research, Manufacturing, and Applications IX, (7 March 2005); https://doi.org/10.1117/12.602144

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