New infrared sensors for ballistic missile defense

Meimei Z. Tidrow

doi:10.1117/12.583351

25 March 2005 New infrared sensors for ballistic missile defense

Meimei Z. Tidrow

Author Affiliations +

Proceedings Volume 5732, Quantum Sensing and Nanophotonic Devices II; (2005) https://doi.org/10.1117/12.583351
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

The MDA/AS is developing advanced capabilities in the IR sensor area for ballistic missile defense. Infrared sensors play an important role to every layer of ballistic missile defense systems. Current missile defense systems use infrared sensors with material systems such as InSb and HgCdTe. They are sufficient to counter current threat level. However, with the Missile Defense Agency’s (MDA) new capability based acquisition, the Advanced Systems (AS) of MDA is pushing the state-of-the-art of infrared technology to a higher level. The new infrared sensors will have the capability to cover a broad range of spectrum, have higher sensitivity, uniformity and operabilities, large format, multicolor, with a much better manufacturability and affordability. Examples are strained layer type-II superlattices, quantum well infrared photodetectors, HgCdTe on Si, PbSnTe, and other novel concepts. This presentation will discuss what IR sensors are used in current missile defense systems, what is new in technology development, and its system applications.

Citation Download Citation

Meimei Z. Tidrow "New infrared sensors for ballistic missile defense", Proc. SPIE 5732, Quantum Sensing and Nanophotonic Devices II, (25 March 2005); https://doi.org/10.1117/12.583351

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