Electrical Measurements of Sidewall Spacer Dimensions

T. W. Bril; J. M. De Blasi; L. Gutai; M. Chu

doi:10.1117/12.949741

2 January 1986 Electrical Measurements of Sidewall Spacer Dimensions

T. W. Bril, J. M. De Blasi, L. Gutai, M. Chu

Proceedings Volume 0565, Micron and Submicron Integrated Circuit Metrology; (1986) https://doi.org/10.1117/12.949741
Event: 29th Annual Technical Symposium, 1985, San Diego, United States

Abstract

A whole wafer measurement method was developed to measure submicron oxide spacer dimensions. The technique offers the capability to evaluate the glass deposition and etchback processes used to form the spacers. Lateral diffusion of implanted layers can also be measured with this method. Measured spacer-width values agree well with measurements from SEM micrographs. Results show that the precision of this technique is presently limited by electrical probing accuracy and reticle fabrication.

Citation Download Citation

T. W. Bril, J. M. De Blasi, L. Gutai, and M. Chu "Electrical Measurements of Sidewall Spacer Dimensions", Proc. SPIE 0565, Micron and Submicron Integrated Circuit Metrology, (2 January 1986); https://doi.org/10.1117/12.949741

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