Direct observations of energy transfer and quenching dynamics between Alq3 and C545T in thin films with different doping concentrations

Jiun-Haw Lee; Chih-Chung Teng; Jian-Hong Lin; Tian-Chiun Lin; C.C. Yang

doi:10.1117/12.569002

12 January 2005 Direct observations of energy transfer and quenching dynamics between Alq3 and C545T in thin films with different doping concentrations

Jiun-Haw Lee, Chih-Chung Teng, Jian-Hong Lin, Tian-Chiun Lin, C.C. Yang

Author Affiliations +

Proceedings Volume 5632, Light-Emitting Diode Materials and Devices; (2005) https://doi.org/10.1117/12.569002
Event: Photonics Asia, 2004, Beijing, China

Abstract

In this paper, we conducted photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements for the organic films that was composed of tris(8-hydroxyquinoline) aluminum (Alq₃) as the host and 10-(2-benzothiazolyl)-1, 1, 7, 7-tetramethyl-2, 3, 6, 7-tetrahydro-1H, 5H, 11H, [l] benzo-pyrano [6,7,8-ij] quinolizin-11-one (C545T) as the green dopant with different concentration. Typical quench behavior was observed by typical PL measurements when doping concentration exceeds 2% and the carrier lifetime decreased monotonically with increasing doping concentration in TRPL measurements. Time constant for energy transfer from host to dopant decreased with increasing dopant concentration and saturated above 2% dopant concentration. An anomalous blue shift at the initial probe time-interval was observed when dopant concentration was over 4%. It indicated a fast event energy absorption and/or relaxation process which had a time constant less than two picosecond. Two physical mechanisms with different time constant was observed those accounted for the concentration quench behaviors in the Alq3/C545T system.

Citation Download Citation

Jiun-Haw Lee, Chih-Chung Teng, Jian-Hong Lin, Tian-Chiun Lin, and C.C. Yang "Direct observations of energy transfer and quenching dynamics between Alq3 and C545T in thin films with different doping concentrations", Proc. SPIE 5632, Light-Emitting Diode Materials and Devices, (12 January 2005); https://doi.org/10.1117/12.569002

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