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6 December 2004 Advanced photomask repair technology for 65-nm lithography: II
Yasutoshi Itou, Yoshiyuki Tanaka, Nobuyuki Yoshioka, Yasuhiko Sugiyama, Ryoji Hagiwara, Haruo Takahashi, Osamu Takaoka, Tomokazu Kozakai, Osamu Matsuda, Katsumi Suzuki, Mamoru Okabe, Syuichi Kikuchi, Atsushi Uemoto, Anto Yasaka, Tatsuya Adachi, Naoki Nishida, Toshiya Ozawa
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Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.578615
Event: Photomask Technology, 2004, Monterey, California, United States
Abstract
The 65nm photomasks have to meet tight specifications and improve the production yield due to high production cost. The 65nm optical lithography has two candidates, 157nm and 193nm, and we are developing two types of experimental photomask repair systems, FIB and EB, for the 65nm generation. We designed and developed experimental EB and FIB system that are beta systems. The construction of these systems was the same design except the each column. The platforms of beta systems consist of anti-vibration design to reduce outer disturbance for repair accuracy. Furthermore, we developed a new CPU control system, especially the new beam-scanning control system that makes it possible to control the beam position below nanometer order. These developments will suppress transmission loss and improve repair accuracy of the systems. We also adopt the 6-inch mask SMIF pod system and the CAD data linkage system that matches the EB mask data image with the SED image to search defects in photomasks with sophisticated patterns such as OPC patterns. We evaluated the EB and FIB beta systems with AIMS, LWM and AFM. EB and FIB beta systems were able to deposit carbon film and etch chrome, quartz, and MoSi. Furthermore, We confirmed that repair accuracy is 3σ below 10nm and transmission is over 97%. We also confirmed that CAD linkage was able to repair sophisticated pattern completely. In this paper, we report the photomask defect repair experimental systems for the 65nm generation.
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Yasutoshi Itou, Yoshiyuki Tanaka, Nobuyuki Yoshioka, Yasuhiko Sugiyama, Ryoji Hagiwara, Haruo Takahashi, Osamu Takaoka, Tomokazu Kozakai, Osamu Matsuda, Katsumi Suzuki, Mamoru Okabe, Syuichi Kikuchi, Atsushi Uemoto, Anto Yasaka, Tatsuya Adachi, Naoki Nishida, and Toshiya Ozawa "Advanced photomask repair technology for 65-nm lithography: II", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.578615
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KEYWORDS
Photomasks
Lithography
Etching
Computer aided design
Control systems
Surface conduction electron emitter displays
193nm lithography
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