A fast optical scanning deflectometer for measuring the topography of large silicon wafers

Stefan Krey; Willem D. van Amstel; Konrad Szwedowicz; Juan Campos; Alfonso Moreno; Erik Jan Lous

doi:10.1117/12.559702

14 October 2004 A fast optical scanning deflectometer for measuring the topography of large silicon wafers

Stefan Krey, Willem D. van Amstel, Konrad Szwedowicz, Juan Campos, Alfonso Moreno, Erik Jan Lous

Proceedings Volume 5523, Current Developments in Lens Design and Optical Engineering V; (2004) https://doi.org/10.1117/12.559702
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

A compact scanning deflectometer is presented for the fast topography measurement of semiconductor wafers. The technique, however, is equally well suited for any flat or slightly curved specular reflective surface. The measurement principle is based on the 2D measurement of the local slope vector by means of a narrow Laser beam scanning rapidly across the sample surface. The fast linear scanning is combined with sample rotation to measure the complete surface of circular samples. There is no physical contact to the measured surface. The topography of the sample is derived from the slope data by a novel 2D integration method, which is robust with respect to noise in the slope signals. We present the full-size topography of unpatterned and patterned wafers of different polishing quality.

Citation Download Citation

Stefan Krey, Willem D. van Amstel, Konrad Szwedowicz, Juan Campos, Alfonso Moreno, and Erik Jan Lous "A fast optical scanning deflectometer for measuring the topography of large silicon wafers", Proc. SPIE 5523, Current Developments in Lens Design and Optical Engineering V, (14 October 2004); https://doi.org/10.1117/12.559702

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