The noise behavior of JFET transistors from room temperature down to 80 k

C. Arnaboldi; Giuliano Boella; E. Panzeri; Gianluigi Pessina

doi:10.1117/12.555775

25 May 2004 The noise behavior of JFET transistors from room temperature down to 80 k

C. Arnaboldi, Giuliano Boella, E. Panzeri, Gianluigi Pessina

Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.555775
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain

Abstract

We have designed and built a very simple and efficient instrument that allows performing very accurate noise measurements of transistors at any biasing conditions, from room temperature down to cryogenic temperatures. This way a study has been possible of the noise behavior of Silicon JFETs for both the low frequency and the high frequency white noise. We explored a wide range of biasing conditions, starting from a power dissipation of only 2 μW up to 1 μW. Concerning white noise, evidence was found for the hot electron effect: it was negligible at small power dissipation and evident at large power. An experimental study was made of the low frequency noise. Its interpretation was developed based on the Generation Recombination theory. Many JFET samples were investigated, made with different technologies and having different gate area.

Citation Download Citation

C. Arnaboldi, Giuliano Boella, E. Panzeri, and Gianluigi Pessina "The noise behavior of JFET transistors from room temperature down to 80 k", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.555775

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