Paper
25 May 2004 Nonlocal transport and thermal noise of the nanoscale MOSFET
Author Affiliations +
Proceedings Volume 5470, Noise in Devices and Circuits II; (2004) https://doi.org/10.1117/12.546941
Event: Second International Symposium on Fluctuations and Noise, 2004, Maspalomas, Gran Canaria Island, Spain
Abstract
We study the thermal noise characteristics of the scaled MOSFET devices using the hydrodynamic transport model and the Green's function technique. We compare the result of the hydrodynamic model with that of the drift-diffusion model and study the effect of the nonlocal transport on the drain noise current for the NMOSFET with the Lmet (determined by the metallurgical junctions) about 40 nm. It is found that the nonlocal transport effect broadens the effective vector Green's function and increases the responses of the electrostatic potential and the electric field at the entrance of the channel, which can directly influence the drain noise current. We also study the effect of the spatially nonuniform energy relaxation time on the noise characteristics and find that the region with larger energy relaxation time is less sensitive to the velocity fluctuation noise.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Young June Park, Seonghoon Jin, Sung-min Hong, and Hong Shick Min "Nonlocal transport and thermal noise of the nanoscale MOSFET", Proc. SPIE 5470, Noise in Devices and Circuits II, (25 May 2004); https://doi.org/10.1117/12.546941
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KEYWORDS
Field effect transistors

Instrument modeling

Diffusion

Thermal modeling

Monte Carlo methods

Picosecond phenomena

Analytical research

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