Paper
20 August 2004 Recent CD accuracy improvements for HL-7000M
Zhigang Wang, Hidetoshi Satoh, Hiroyuki Ito, Yasunari Sohda, Hiroya Ohta, Hajime Kawano, Yasuhiro Kadowaki, Kazui Mizuno, Takashi Matsuzaka
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Abstract
A new electron beam mask writer, HL-7000M, has been developed for mass production of 90 nm node photomask and, research and development of 65 nm node mask. A series of adjustments to improve CD accuracy provides us a novel systematic solution for VSB system optimization. By applying a novel constant-gain method for linearity adjustment, linearity range, for designed size ranging from 0.3 um to 1.0 um, has been improved to < 3 nm for line and space pattern, the maximum XY discrepancy is 2 nm. Both experimental and theoretical studies for shot-divided patterns, which are often generated in OPC pattern conversion, have been applied. By modification of the shift term in beam size correction, exposure results for such shot-divided patterns, for divided pattern size varied from 500 nm to 1 nm, are improved to be less than 5 nm in range.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhigang Wang, Hidetoshi Satoh, Hiroyuki Ito, Yasunari Sohda, Hiroya Ohta, Hajime Kawano, Yasuhiro Kadowaki, Kazui Mizuno, and Takashi Matsuzaka "Recent CD accuracy improvements for HL-7000M", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557807
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KEYWORDS
Optical proximity correction

Vestigial sideband modulation

Calibration

Critical dimension metrology

Photomasks

Optical simulations

Data conversion

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