Paper
20 August 2004 Demonstration of damage-free mask repair using electron beam-induced processes
Ted Liang, Alan R. Stivers, Michael Penn, Dan Bald, Chetan Sethi, Volker Boegli, Michael Budach, Klaus Edinger, Petra Spies
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Abstract
In this paper, we present the test results obtained from the first commercial electron beam mask repair tool. Repaired defect sites on chrome-on-glass masks are characterized with 193nm AIMS to quantify the edge placement precision as well as optical transmission loss. The electron beam mask repair tool is essentially based on a scanning electron microscope (SEM), therefore, it can be used for in-situ CD and defect metrology. E-beam for EUV mask defect repair is also discussed. These early results are very encouraging and demonstrate the basic advantages of electron beam mask repair as well as highlight the key challenge of charge control.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ted Liang, Alan R. Stivers, Michael Penn, Dan Bald, Chetan Sethi, Volker Boegli, Michael Budach, Klaus Edinger, and Petra Spies "Demonstration of damage-free mask repair using electron beam-induced processes", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557788
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Cited by 17 scholarly publications.
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KEYWORDS
Photomasks

Etching

Electron beams

Extreme ultraviolet

Scanning electron microscopy

Ruthenium

Atomic force microscopy

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