Current Status Of Amorphous Silicon Device Technology

Yoshihiro Hamakawa

doi:10.1117/12.948199

9 May 1985 Current Status Of Amorphous Silicon Device Technology

Yoshihiro Hamakawa

Proceedings Volume 0543, Photovoltaics; (1985) https://doi.org/10.1117/12.948199
Event: 1985 Technical Symposium East, 1985, Arlington, United States

Abstract

A review is given on recent progresses of amorphous silicon device technologies and its applications to solar cell. Firstly, some unique advantages of amorphous silicon as a new electronic material are pointed out with demonstrating some tangible examples in the live technology. Secondly, some topics in the R&D efforts on new film deposition trials related to high processing rate are introduced. Then, approaches to improve photovoltaic performances utilizing the optical and carrier confinement effects with new amorphous materials such as amorphous SiC, SiGe and micro-crystalline Si are demonstrated. In the final part, progress of the a-Si solar cell performances is also summarized and discussed.

Citation Download Citation

Yoshihiro Hamakawa "Current Status Of Amorphous Silicon Device Technology", Proc. SPIE 0543, Photovoltaics, (9 May 1985); https://doi.org/10.1117/12.948199

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