Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects

Vladimir M. Borzdov; Vadim Galenchik; Oleg Zhevnyak; Fadei F. Komarov; A. Zyazulya

doi:10.1117/12.562736

28 May 2004 Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects

Vladimir M. Borzdov, Vadim Galenchik, Oleg Zhevnyak, Fadei F. Komarov, A. Zyazulya

Author Affiliations +

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.562736
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

The ensemble Monte Carlo algorithm for simulation of charge carrier transport in short channel MOSFET was developed. The mobile charge carrier concentration and electrostatic potential calculation procedures were worked out. The drain current increasing mechanisms caused by secondary holes transport in short channel MOSFET were considered. It was found out that at channel length about 0.1 μm the influence of secondary holes transport is quite significant.

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Vladimir M. Borzdov, Vadim Galenchik, Oleg Zhevnyak, Fadei F. Komarov, and A. Zyazulya "Ensemble Monte Carlo simulation of submicron n-channel MOSFETs with account of hot electron effects", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.562736

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