Paper
28 May 2004 Electron-phonon interaction in 2D heterostructures
J. Pozela, K. Pozela
Author Affiliations +
Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558455
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Electron-phonon interaction in two-dimensional (2D) heterostructures is discussed. The Boltzmann kinetic equation and mobility in 2D heterostructures, engineering of electron-phonon scattering in quantum wells, coupled quantum well and photovoltaic effect, decrease of channel conductivity with increasing sheet electron concentration in modulation-doped heterostructures are considered.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Pozela and K. Pozela "Electron-phonon interaction in 2D heterostructures", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.558455
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KEYWORDS
Quantum wells

Phonons

Scattering

Heterojunctions

Modulation

Semiconductors

Field effect transistors

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