Paper
18 April 1985 Optimization Of Resist Optical Density For High Resolution Lithography On Reflective Surfaces
Andrew V. Brown, William H. Arnold
Author Affiliations +
Abstract
The effect of positive photo resist's unbleachable absorbance on standing wave effects, reflective notching, scumming, exposure latitude and time, bleaching rates, and resist contrast has been evaluated using both theoretical simulation and experimental data. The addition of unbleachable dye to the resist film is shown to reduce reflective notching and the variation of dose with changing resist thickness. Adding dye also leads to a larger standing wave toe on the resist profiles and to increased exposure times. Bleaching rates are reduced and resist profiles are decreased from the vertical. Data is presented showing the improved CD control using dyed resist on interconnect layers.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew V. Brown and William H. Arnold "Optimization Of Resist Optical Density For High Resolution Lithography On Reflective Surfaces", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947841
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Cited by 13 scholarly publications and 1 patent.
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KEYWORDS
Absorbance

Absorption

Aluminum

Photoresist materials

Reflectivity

Semiconducting wafers

Computer simulations

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