Crystallization kinetics and recording characteristics of Cu/a-Si bilayer recording film for write-once Blu ray disk

Yung-Chiun Her; Chun-Lin Wu

doi:10.1117/12.556275

9 September 2004 Crystallization kinetics and recording characteristics of Cu/a-Si bilayer recording film for write-once Blu-ray disk

Yung-Chiun Her, Chun-Lin Wu

Author Affiliations +

Proceedings Volume 5380, Optical Data Storage 2004; (2004) https://doi.org/10.1117/12.556275
Event: Optical Data Storage Topical Meeting, 2004, Monterey, California, United States

Abstract

The crystallization kinetics and recording characteristics of the Cu/a-Si bilayer recording film have been studied. Under thermal annealing, the crystallization temperature and activation energy for crystallization of a-Si with a thin Cu metal layer were reduced to about 485°C and 3.3±0.1 eV, respectively, indicating that inserting a thin Cu underlayer could effectively reduce the crystallization temperature and activation energy for crystallization of a-Si. The reaction exponent was determined to be around 1.8, corresponding to a crystallization process in which grain growth occurs with nucleation, and the nucleation rate decreases with the progress of the grain growth process. This is consistent with the hypothesis that the Cu₃Si precipitates act as the nucleation sites for the subsequent crystallization of a-Si in the Cu/a-Si bilayer recording film. Additionally, the maximum data-transfer-rates that can be achieved by the Cu/a-Si bilayer recording film at recording powers of 6, 8, and 10 mW were estimated to be about 23, 46, and 223 Mb/s, respectively.

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Yung-Chiun Her and Chun-Lin Wu "Crystallization kinetics and recording characteristics of Cu/a-Si bilayer recording film for write-once Blu-ray disk", Proc. SPIE 5380, Optical Data Storage 2004, (9 September 2004); https://doi.org/10.1117/12.556275

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