Resist interaction in 193-/157-nm immersion lithography

Shinji Kishimura; Masayuki Endo; Masaru Sasago

doi:10.1117/12.534759

14 May 2004 Resist interaction in 193-/157-nm immersion lithography

Shinji Kishimura, Masayuki Endo, Masaru Sasago

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.534759
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

We have investigated the interaction of resists with water and perfluoropolyether (PFPE) as immersion fluids. We found that some unique behaviors occurred in immersion lithography. An acetal protected poly(p-hydroxystyrene) type resist in water immersion showed decreased resist thickness after exposure. The deprotection reaction during exposure appeared to be accelerated by water. A COMA (cycloolefine-mareic anhydride alt-copolymer) type resist in water immersion showed an increased dissolution rate. FT-IR measurements indicated that the hydrolysis of maleic anhydride occurred during exposure and post-exposure baking. A reduction in the dissolution rate was observed in the immersion lithography of most resists. In water immersion, the formation of a surface insoluble layer and swelling was observed. We confirmed that a photochemical acid generator (PAG) or generated acid eluted into the water by TOF-SIMS. In PFPE immersion, we think that PFPE penetrating across the resist film blocks the penetration of the alkaline aqueous developer.

Citation Download Citation

Shinji Kishimura, Masayuki Endo, and Masaru Sasago "Resist interaction in 193-/157-nm immersion lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534759

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