Polymeric protective coatings for MEMS wet-etch processes

Kimberly A. Ruben; Tony D. Flaim; Chenghong Li

doi:10.1117/12.523965

30 December 2003 Polymeric protective coatings for MEMS wet-etch processes

Kimberly A. Ruben, Tony D. Flaim, Chenghong Li

Proceedings Volume 5342, Micromachining and Microfabrication Process Technology IX; (2003) https://doi.org/10.1117/12.523965
Event: Micromachining and Microfabrication, 2004, San Jose, California, United States

Abstract

Microelectromechanical systems (MEMS) device manufacturers today are faced with the challenge of protecting electronic circuitry and other sensitive device structures during deep silicon wet-etch processes. Etch processes of this nature require prolonged exposure of the device to harsh corrosive mixtures of aqueous acids and bases at higher than ambient temperatures. A need exists for a spin-applied polymeric coating to prevent the exposure of such circuitry against the corrosive etchants. The challenge exists in developing protective coatings that will not decompose or dissolve in the etchants during the etch process. Such coatings require superior adhesion to the substrate without destroying the sensitive features below. Brewer Science, Inc., has developed a multilayer coating system for basic etchants which is compatible with a variety of semiconductor materials and offers protection against concentrated potassium hydroxide (KOH) etchants at prolonged exposure times of more than 8 hours. In addition, a second multilayer coating system is being developed for use with strong hydrofluoric and other various mixed acid etchants (MAEs) for exposures of 30 minutes or longer. These materials are specifically designed to protect circuitry subjected to concentrated MAEs during the wafer thinning processes used by MEMS device manufacturers.

Citation Download Citation

Kimberly A. Ruben, Tony D. Flaim, and Chenghong Li "Polymeric protective coatings for MEMS wet-etch processes", Proc. SPIE 5342, Micromachining and Microfabrication Process Technology IX, (30 December 2003); https://doi.org/10.1117/12.523965

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