An original new design for manufacturing a piezo-resistive type micro-accelerometer made by Si bulk micro-machining is proposed. The enhancements applied by the authors especially in design and also in processing and control techniques lead to a more precise device, having a superior reliability. Opposite to classical type, the new model have shorter cantilever, enabling to have an uniform stress and so permitting us a long piezo-resistor design. This in turn enables the use of low surface boron concentration of diffused resistors, resulting in a low temperature drift. After ANSIS simulation, showing the benefits of this new design, it follows the description of layout-based surface and volume control elements, and finally the processing enhancements applied to give a 1g piezo-resistive accelerometer
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