Scribing of thin sapphire substrates with a 266-nm Q-switched solid state laser

Edward C. Rea Jr.

doi:10.1117/12.529613

15 July 2004 Scribing of thin sapphire substrates with a 266-nm Q-switched solid state laser

Edward C. Rea Jr.

Proceedings Volume 5339, Photon Processing in Microelectronics and Photonics III; (2004) https://doi.org/10.1117/12.529613
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States

Abstract

Thin sections of single-crystal sapphire are favored as substrates for the epitaxial deposition of gallium nitride and other III-V and II-VI thin films used in the fabrication of electro-optic devices such as blue-green LEDs and laser diodes. Due to difficulties commonly encountered in cutting this hard material, alternatives to traditional mechanical processing techniques are of particular interest. This paper reviews a recent study characterizing the scribing of sapphire using the tightly focused output of an ultraviolet wavelength pulsed solid-state laser.

Citation Download Citation

Edward C. Rea Jr. "Scribing of thin sapphire substrates with a 266-nm Q-switched solid state laser", Proc. SPIE 5339, Photon Processing in Microelectronics and Photonics III, (15 July 2004); https://doi.org/10.1117/12.529613

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