Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well

Ying-Qiang Xu; Wei Zhang; Zichuang Niu; Ronghan Wu; Qiming Wang

doi:10.1117/12.523225

12 May 2004 Effect of SiO₂ encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well

Ying-Qiang Xu, Wei Zhang, Zichuang Niu, Ronghan Wu, Qiming Wang

Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.523225
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China

Abstract

Effects of SiO₂ encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO₂-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO₂ cap-layer. A simple model [1] was used to describe the SiO₂-enhanced blueshift of the low temperature PL peak energy.

Citation Download Citation

Ying-Qiang Xu, Wei Zhang, Zichuang Niu, Ronghan Wu, and Qiming Wang "Effect of SiO₂ encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.523225

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