Focus latitude optimization for model-based OPC

Qi-De Qian; Shinichi Takase

doi:10.1117/12.517996

17 December 2003 Focus latitude optimization for model-based OPC

Qi-De Qian, Shinichi Takase

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.517996
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

Variations in manufacturing process introduce uncertainties optical proximity correction. Discrepancies may arise between model extraction and the actual manufacturing conditions. An optimally constructed mask should minimize the sensitivity of line width variation in lithography and prevent pattern failure such a line pinch-off. In this paper, the effect of defocus on OPC mask and wafer patterning is investigated using a physical pattern transfer simulator, LithoScope. We evaluate the impact of defocus on a set of special test patterns and on a real circuit layout. We propose to control defocus effect by a combination of proper design centering and physical model-based data verification.

Citation Download Citation

Qi-De Qian and Shinichi Takase "Focus latitude optimization for model-based OPC", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.517996

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