Design and fabrication of InAsSb detectors

Mathieu Carras; Gabrielle Marre; Borge Vinter; Jean Luc Reverchon; Vincent Berger

doi:10.1117/12.514204

19 February 2004 Design and fabrication of InAsSb detectors

Mathieu Carras, Gabrielle Marre, Borge Vinter, Jean Luc Reverchon, Vincent Berger

Proceedings Volume 5251, Detectors and Associated Signal Processing; (2004) https://doi.org/10.1117/12.514204
Event: Optical Systems Design, 2003, St. Etienne, France

Abstract

A study of the optimisation of the detectivity of a mid infrared double heterostructures photovoltaic detector is proposed. Simple approximate analytic expressions for the dark current are compared with full numerical calculations, and give physical insight on the mechanisms dominating the dark current. The analysis is performed step by step in different structures, from a simple p-n junction to the full double heterostructures. The influence of temperature, barrier band gap energy and absorbing layer thickness in a double heterostructures, doping density in the active region on diffusion and generation-recombination mechanisms is analysed.

Citation Download Citation

Mathieu Carras, Gabrielle Marre, Borge Vinter, Jean Luc Reverchon, and Vincent Berger "Design and fabrication of InAsSb detectors", Proc. SPIE 5251, Detectors and Associated Signal Processing, (19 February 2004); https://doi.org/10.1117/12.514204

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