Surface photovoltage studies of porous silicon in presence of polluting gases: toward a selective gas sensor

Guido Faglia; Camilla Baratto; Giorgio Sberveglieri; Zeno Gaburro; Lorenzo Pavesi

doi:10.1117/12.509074

14 November 2003 Surface photovoltage studies of porous silicon in presence of polluting gases: toward a selective gas sensor

Guido Faglia, Camilla Baratto, Giorgio Sberveglieri, Zeno Gaburro, Lorenzo Pavesi

Author Affiliations +

Proceedings Volume 5222, Nanocrystals, and Organic and Hybrid Nanomaterials; (2003) https://doi.org/10.1117/12.509074
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

The work function of nano Porous Silicon (PS) has been studied by the kelvin probe method as a function of the exposure to different gaseous species. Characterisation has been performed n dark and in presence of sub band and supra band gap light Surface Photovoltage (SPV)measurements. Traces of ammonia and nitrogen dioxide change drastically the shape of SPV as a function of photon energy:light induces transitions from and to surface states produced by gas adsorption. The results foresee the possibility to improve semiconductor sensor selectivity by using monochromatic light at well defined frequency able to activate/deactivate surface states where species are adsorbed

Citation Download Citation

Guido Faglia, Camilla Baratto, Giorgio Sberveglieri, Zeno Gaburro, and Lorenzo Pavesi "Surface photovoltage studies of porous silicon in presence of polluting gases: toward a selective gas sensor", Proc. SPIE 5222, Nanocrystals, and Organic and Hybrid Nanomaterials, (14 November 2003); https://doi.org/10.1117/12.509074

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