Paper
26 June 2003 Model-based PPC verification methodology with two dimensional pattern feature extraction
Kohji Hashimoto, Takeshi Ito, Takahiro Ikeda, Shigeki Nojima, Soichi Inoue
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Abstract
A Novel model-based process proximity correction (PPC) verification methodology is proposed. This methodology features the comparison between actual processed wafers and target CAD data. The new system makes it possible to compare extracted two-dimensional pattern features on actual processed wafers with target pattern features on CAD data at any “hot spot” patterns. The “hot spot” patterns have relatively large CD errors on wafers after PPC in lithography simulation. In addition to this methodology, the model-based PPC verification flow was constructed with a feedback loop of the results. The application of this methodology to the 90nm-node CMOS gate yielded useful information on accurate CD control. The qualitative and quantitative consideration from the results indicated suitable subsequent actions regarding wafer fabrication, mask re-fabrication, PPC re-modeling and PPC re-parameterization in the feedback loop.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kohji Hashimoto, Takeshi Ito, Takahiro Ikeda, Shigeki Nojima, and Soichi Inoue "Model-based PPC verification methodology with two dimensional pattern feature extraction", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485511
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CITATIONS
Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
Lithography

Semiconducting wafers

Model-based design

Photomasks

Solid modeling

Feature extraction

Feedback loops

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