193-nm multilayer imaging systems

James D. Meador; Doug Holmes; William DiMenna; Mariya I. Nagatkina; Michael D. Rich; Tony D. Flaim; Randy Bennett; Ichiro Kobayashi

doi:10.1117/12.485082

12 June 2003 193-nm multilayer imaging systems

James D. Meador, Doug Holmes, William DiMenna, Mariya I. Nagatkina, Michael D. Rich, Tony D. Flaim, Randy Bennett, Ichiro Kobayashi

Author Affiliations +

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485082
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

This paper highlights the performance of new materials that have been developed for use in 193-nm trilayer microlithography. The products are embedded etch masking layers (EMLs) and bottom antireflective coatings (BARCs). Both coatings are spin applied from organic solvent(s) and then thermoset during a hot plate bake. The EMLs (middle layers) are imaging compatible with JSR, Sumitomo, and TOK 193-nm photoresists. Best-case trilayer film stacks have given 100-nm dense and semi-dense L/S. Plasma etching, selectivities and solution compatibility performance of the EMLs meet or exceed proposed product targets. In addition, the EMLs exhibit both solution and plasma etching properties that should lead to successful rework processes for photoresists. The multiplayer BARCs offer good thick film coating quality and contribute to excellent images when used in trilayer applications. Combining the EMLs, which are nearly optically transparent (k=0.04) at 193-nm, with the new trilayer BARCs results in outstanding Prolith simulated reflectance control. In one modeling example, reflectance is a flat line at 0.5% on five different substrates for BARC thicknesses between 300 and 700-nm.

Citation Download Citation

James D. Meador, Doug Holmes, William DiMenna, Mariya I. Nagatkina, Michael D. Rich, Tony D. Flaim, Randy Bennett, and Ichiro Kobayashi "193-nm multilayer imaging systems", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485082

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