Improved beam quality due to current profiling in a broad-area semiconductor laser

John A. Houlihan; Vincent Voignier; James R. O'Callaghan; Guanhong Wu; Guillaume Huyet; John Gerard McInerney; Brian Corbett

doi:10.1117/12.476265

11 March 2003 Improved beam quality due to current profiling in a broad-area semiconductor laser

John A. Houlihan, Vincent Voignier, James R. O'Callaghan, Guanhong Wu, Guillaume Huyet, John Gerard McInerney, Brian Corbett

Author Affiliations +

Proceedings Volume 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration; (2003) https://doi.org/10.1117/12.476265
Event: Photonics Fabrication Europe, 2002, Bruges, Belgium

Abstract

We describe the different mechanisms to generate waves in the transverse section of lasers. Our analysis, based on the Maxwell-Bloch equations, is compared to recent experimental results.

Citation Download Citation

John A. Houlihan, Vincent Voignier, James R. O'Callaghan, Guanhong Wu, Guillaume Huyet, John Gerard McInerney, and Brian Corbett "Improved beam quality due to current profiling in a broad-area semiconductor laser", Proc. SPIE 4947, Laser Diodes, Optoelectronic Devices, and Heterogenous Integration, (11 March 2003); https://doi.org/10.1117/12.476265

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