Characterization of GaInAsP/InP multiple quantum wells grown by solid source MBE for long-wavelength infrared detection

Dao Hua Zhang; Lu Sun; Soon Fatt Yoon; Chan Hin Kam; Weijun Fan; Ting Mei

doi:10.1117/12.465824

20 September 2002 Characterization of GaInAsP/InP multiple quantum wells grown by solid source MBE for long wavelength infrared detection

Dao Hua Zhang, Lu Sun, Soon Fatt Yoon, Chan Hin Kam, Weijun Fan, Ting Mei

Author Affiliations +

Proceedings Volume 4919, Advanced Materials and Devices for Sensing and Imaging; (2002) https://doi.org/10.1117/12.465824
Event: Photonics Asia, 2002, Shanghai, China

Abstract

N-type strained GaInAsP/InP multiple quantum well (MQW) structures have been grown successfully using all solid source molecular beam epitaxy (MBE) and the effects of doping density in the wells on the quality of the MQW structures have been investigated. In the high-resolution x-ray diffraction curves, well-defined sharp satellite peaks up to the 15th order can be observed, indicating a very high crystalline quality of the MQW structures. With increase of Si-doping concentration in the wells, the lattice mismatch increases. The FWHM of the zero-order peak also increases and fits a Logistic function well with the doping density. The period of the MQW structures is found to decrease and the intensity of the first-order satellite peak to decays exponentially. All the observations can be explained by the changes in lattice constant, interface defects, dopant diffusion and possibly growth rate, caused by high doping in the wells of the MQW structures.

Citation Download Citation

Dao Hua Zhang, Lu Sun, Soon Fatt Yoon, Chan Hin Kam, Weijun Fan, and Ting Mei "Characterization of GaInAsP/InP multiple quantum wells grown by solid source MBE for long wavelength infrared detection", Proc. SPIE 4919, Advanced Materials and Devices for Sensing and Imaging, (20 September 2002); https://doi.org/10.1117/12.465824

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