Optical characteristics of InGaN/GaN quantum well structures with embedded quantum dots

Yi-Yin Chung; Yen-Sheng Lin; Shih-Wei Feng; Yung-Chen Cheng; Kung-Jen Ma; Chih Chung Yang; Cheng-Ta Kuo; Jian-Shihn Tsang

doi:10.1117/12.482213

5 September 2002 Optical characteristics of InGaN/GaN quantum well structures with embedded quantum dots

Yi-Yin Chung, Yen-Sheng Lin, Shih-Wei Feng, Yung-Chen Cheng, Kung-Jen Ma, Chih Chung Yang, Cheng-Ta Kuo, Jian-Shihn Tsang

Author Affiliations +

Proceedings Volume 4913, Semiconductor Lasers and Applications; (2002) https://doi.org/10.1117/12.482213
Event: Photonics Asia, 2002, Shanghai, China

Abstract

We compared the results of optical characterization between five InGaN/GaN quantum well samples of different well widths. Temperature dependencies of photoluminescence (PL) spectral positions, integrated PL intensities, and PL intensity decay times at PL peaks of all the five samples showed three temperature ranges of different variation trends. The radiative efficiencies of the samples in the high temperature range had the same decay slope, which is supposed to be determined by the defect structures outside clusters. The radiative efficiencies in the medium temperature range varied among samples, indicating different defect structures in the regions between coupled clusters in different samples. Consistent results of temperature dependent variations between the integrated PL intensity and PL decay time among these samples provided clues for reasonable interpretations. Also, we showed the strong dependencies of thermal annealing effects on quantum well (QW) width in InGaN/GaN QW structures. Thermal annealing at 800 °C of a narrow QW width (2 nm) structure led to improved optical quality. However, thermal annealing at the same temperature of a sample of larger QW width (4 nm) resulted in degraded optical quality.

Citation Download Citation

Yi-Yin Chung, Yen-Sheng Lin, Shih-Wei Feng, Yung-Chen Cheng, Kung-Jen Ma, Chih Chung Yang, Cheng-Ta Kuo, and Jian-Shihn Tsang "Optical characteristics of InGaN/GaN quantum well structures with embedded quantum dots", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482213

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE