Growth and characterization of AlGaN/GaN superlattices

Wenping Guo; Hui Hu; Xiaoying Zhou; Tong Wu; Changzheng Sun; Yi Luo

doi:10.1117/12.482214

5 September 2002 Growth and characterization of AlGaN/GaN superlattices

Wenping Guo, Hui Hu, Xiaoying Zhou, Tong Wu, Changzheng Sun, Yi Luo

Proceedings Volume 4913, Semiconductor Lasers and Applications; (2002) https://doi.org/10.1117/12.482214
Event: Photonics Asia, 2002, Shanghai, China

Abstract

(A1)GaN semiconductors have many important applications in high temperature, high power and high frequency electronic devices such as HEMT and HBT, as well as in blue laser diodes, UV LEDs and detectors. In this work, AIGaN/GaN superlattices have been grown by low-pressure metal-organic vapor phase epitaxy (LP-MOVPE) and characterized by high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), and photoluminescence (PL). The HRXRD measurements show that the crack-free epi-layer grown at optimized condition has very flat interface and good crystal quality. The AFM data also affirmed the HRXRD results with a root-mean-square roughness as low as 0.3 nm. The possible origin has also been proposed for the two peaks observed in the PL spectrum of Mg-doped A1GaN/GaN superlattices.

Citation Download Citation

Wenping Guo, Hui Hu, Xiaoying Zhou, Tong Wu, Changzheng Sun, and Yi Luo "Growth and characterization of AlGaN/GaN superlattices", Proc. SPIE 4913, Semiconductor Lasers and Applications, (5 September 2002); https://doi.org/10.1117/12.482214

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