Recovery of Mo/Si-multilayer-coated LTEM substrate

Pawitter J. S. Mangat; A. Alec Talin; Andrew F. Hooper; Diana Convey; Sang-In Han; James R. Wasson

doi:10.1117/12.468106

27 December 2002 Recovery of Mo/Si multilayers coated LTEM substrate

Pawitter J. S. Mangat, A. Alec Talin, Andrew F. Hooper, Diana Convey, Sang-In Han, James R. Wasson

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.468106
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

Extreme ultraviolet lithography (EUVL) is a leading next generation lithography technology. The mask blank for EUVL consists of a low thermal expansion material substrate having a square photomask form factor that is coated with Mo/Si multilayers. One of the challenges in implementing EUVL is to economically fabricate multilayer-coated mask blanks with no printable defects. The starting substrates, due to the required tight specifications of flatness and defects, might have a very high manufacturing cost and hence a method to recover these substrates for reuse without compromising the properties will enable a lower cost for the masks. This paper details a potential approach to remove the damaged multilayers from the substrates without compromising the morphology and characteristics of the starting substrate. Furthermore, the process is applicable to optical elements of the EUV projection optics system that have reflective Mo/Si mirrors of various shapes.

Citation Download Citation

Pawitter J. S. Mangat, A. Alec Talin, Andrew F. Hooper, Diana Convey, Sang-In Han, and James R. Wasson "Recovery of Mo/Si multilayers coated LTEM substrate", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.468106

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KEYWORDS

Etching

Molybdenum

Surface roughness

Photomasks

Silicon

Multilayers

Extreme ultraviolet lithography

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