EUV-emission of xenon clusters excited by a high-repetition-rate burst-mode laser

Holger Stiel; Ulrich Vogt; Sargis Ter-Avetisyan; Matthias Schnurer; Ingo Will; Peter Viktor Nickles

doi:10.1117/12.450965

23 October 2002 EUV emission of Xe-clusters excited by a high-repetition rate burst mode laser

Holger Stiel, Ulrich Vogt, Sargis Ter-Avetisyan, Matthias Schnurer, Ingo Will, Peter Viktor Nickles

Proceedings Volume 4781, Advances in Laboratory-Based X-Ray Sources and Optics III; (2002) https://doi.org/10.1117/12.450965
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

In this contribution we describe a laser plasma source for Extreme Ultraviolet Lithography (EUVL) based on a Xe-cluster target. Although Xe-clusters as target systems for EUVL are known for some time, no attempts have been made for a systematic study of the influence of the laser parameters on the EUV-emission at a well defined Xe-aggregation. The MBI burst mode laser used offers some unique features: Within one burst (duration 800 μs) the repetition rate of single laser pulses can be adjusted between 30 and 1000 kHz. The average power per burst is about 5 kW at the maximum energy of 4 J/burst. The pulse duration of a single pulse can be adjusted from the ps- to ns-range. We have examined the EUV-emission from the Xe-cluster target within one burst of the laser as a function of single pulse intensity and repetition rate. Based on the measured EUV-spectra the conversion efficiency at 13.4 nm wavelength in dependence on pulse duration in the range from 30 ps to 3 ns were estimated.

Citation Download Citation

Holger Stiel, Ulrich Vogt, Sargis Ter-Avetisyan, Matthias Schnurer, Ingo Will, and Peter Viktor Nickles "EUV emission of Xe-clusters excited by a high-repetition rate burst mode laser", Proc. SPIE 4781, Advances in Laboratory-Based X-Ray Sources and Optics III, (23 October 2002); https://doi.org/10.1117/12.450965

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