Application of vector scan electron-beam lithography to 45-nm node extreme-ultraviolet lithography reticles

David M. Walker; Dhirendra P. Mathur; Clyde Su; Torey Huang

doi:10.1117/12.476990

1 August 2002 Application of vector scan electron-beam lithography to 45-nm node extreme-ultraviolet lithography reticles

David M. Walker, Dhirendra P. Mathur, Clyde Su, Torey Huang

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476990
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

Extreme UVL (EUVL) is expected to meet the manufacturing lithography requirements of the 45 nm node and below. The manufacturer of 45 nm EUVL reticles will require advancement in both traditional mask production capabilities as well as requirements uniquely related to EUVL reticles. Photonics is actively pursuing EUVL reticle capability along two paths. First, the NGL Mask Center of Competency (MCoC) has been developing mask technology to support proximity x-ray, electron projection lithography (EPL) and EUVL for several years. The MCoC has applied high resolution lithography and pattern transfer processes developed for 125 nm and below 1X processes to 4X EUVL masks. In addition, the McoC is collaboration with suppliers on the development of low defect mask blanks and inspection techniques as well as developing low temperature chemically amplified resist processes and low stress materials deposition and processing specifically for EUVL mask fabrication. Key process technology including high resolution vector scan EB lithography and chemically amplified resist processes and has been transferred from the MCoC to manufacturing sites. Secondly, as a natural extension of the optical reticle product line, EUVL reticles will benefit from current and continued mask manufacturing development. Vector scan e-beam lithography with chemically amplified resists will be used at both the Photonics MCoC and manufacturing facilities to improve resolution and productivity for sub 100 nm reticle production.

Citation Download Citation

David M. Walker, Dhirendra P. Mathur, Clyde Su, and Torey Huang "Application of vector scan electron-beam lithography to 45-nm node extreme-ultraviolet lithography reticles", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476990

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